Optoelectronic Component and Method for Producing an Optoelectronic Component

ABSTRACT

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a layer structure having an active zone for producing electromagnetic radiation, wherein the active zone is arranged in a first plane, wherein a recess is introduced into the surface of the layer structure, wherein the recess adjoins an end surface of the component, wherein the end surface is arranged in a second plane, wherein the second plane is arranged substantially perpendicularly to the first plane, wherein the recess has a bottom surface and a lateral surface wherein the lateral surface is arranged substantially perpendicularly to the end surface, wherein the lateral surface is arranged tilted at an angle not equal to 90° to the first plane of the active zone, and wherein the bottom surface is arranged in the region of the first plane of the active zone.

This patent application is a national phase filing under section 371 ofPCT/EP2015/077142, filed Nov. 19, 2015, which claims the priority ofGerman patent application 10 2014 117 510.7, filed Nov. 28, 2014, eachof which is incorporated herein by reference in its entirety.

TECHNICAL FIELD

The invention relates to an optoelectronic component and a method forproducing an optoelectronic component.

BACKGROUND

U.S. Pat. No. 7,724,793 discloses an optoelectronic component comprisinga recess, wherein the recess adjoins a mirror face. The recess comprisesperpendicular side walls and a bottom face.

SUMMARY OF THE INVENTION

Embodiments of the invention provide an improved component and animproved method for producing a component.

One advantage of the proposed component is that the recess comprises atleast one inclined side face. The recess comprising the inclined sideface affords the advantage that the inclined side face may be reliablyovermolded with a dielectric in order to achieve a passivation of thesurface. Moreover, it is not necessary, in the case of a recesscomprising an inclined side face, to precisely control the depth of therecess during production. For an effective action of the recess forpreventing dislocations at a fracture edge, forming the recess with adefined depth in the region of the active zone is advantageous. In thiscase, the bottom face of the recess is arranged in the region of theactive zone. The bottom face may be arranged in a region above or belowthe active zone.

In particular, the bottom face of the recess may be arranged in a rangeof from 200 nm above the plane of the active zone to 200 nm below theplane of the active zone. The optoelectronic component may beconfigured, e.g., as a laser diode or as a light emitting diode.

Experiments have shown that a depth of the recess in the range ofbetween 100 nm and 800 nm is advantageous. If the recesses are tooshallow, they are virtually ineffective for reducing dislocations, inparticular at a mirror face. In a configuration with a recess that istoo deep, the recess itself may again act like a defect center at whichdislocations may form.

In one embodiment, the recess comprises a depth in relation to thesurface of the layer structure that is in the range of between 100 nmand 800 nm. A sufficient protection of the active zone is achieved inthis way.

In a further embodiment, at least one side face, in particular both sidefaces, comprise(s) an angle of 95° to 160° in an inclined mannerrelative to the plane of the active zone. These angle ranges enable agood protection of the active zone against the formation of dislocationsat a fracture face. Depending on the embodiment chosen, the side facesmay be arranged mirror-symmetrically with respect to one another or bearranged in a manner inclined at different inclination angles.

Particularly by means of an inclined side face which faces the activeregion of the active zone, what may be achieved is that dislocationsthat form proceeding from the recess in the direction of the activeregion of the active zone are diverted downward and extend below theactive zone. This effect is brought about by virtue of the fact thatdislocations always form perpendicularly to a side face.

Depending on the embodiment chosen, the recess may be arranged in alateral edge region of the component and comprise, for example, only oneside face in the fracture direction that faces the active zone. In afurther embodiment, the recess comprises two side faces, wherein atleast one of the two side faces, in particular the side face that facesthe active zone, is arranged in a manner inclined relative to the firstplane of the active zone.

In a further embodiment, the side face comprises two face sections,wherein one face section is arranged in an inclined manner and thesecond face section is aligned substantially perpendicularly to theplane of the active zone. Depending on the embodiment chosen, theinclined face section may be arranged above the straight face section orbelow the straight face section.

In a further embodiment, the recess comprises in a plane parallel to thesecond plane at least one rounded transition between the side face ofthe recess and a top side of the layer structure and/or a bottom face ofthe recess. The rounded formation of the edges in the transition regionof the faces makes it possible to reduce the formation of imperfections,in particular of dislocations. In particular, sharp-edged transitionsbetween the faces may be starting points of further imperfections.

In a further embodiment, the side face comprises two side sectionsarranged one above the other, wherein the side sections are arranged ina manner offset laterally with respect to one another. The side sectionsare connected to one another via a second bottom face. Depending on theembodiment chosen, both side sections or only one of the two sidesections may be inclined and the other side section may be alignedperpendicularly.

Experiments have shown that with a recess which an extent in the secondplane perpendicular to the longitudinal extension of the active regionof the active zone in the range of 10 μm to 200 μm, good effects areachieved for the suppression of imperfections, in particular ofdislocations in the region of the end face, that is to say in the regionof the facet of the laser diode or of the light emitting diode (LED).

Moreover, experiments have shown that good results are achieved in thesuppression of facet imperfections if the recess comprises a distance inthe range of 10 μm to 150 μm from the active region of the active zone.In a further embodiment, a mesa trench is provided between a side of thecomponent and the recess. Stresses of the layer structure may be reducedby the mesa trench.

In one embodiment, use is made of a method for producing a component,wherein the recess is introduced into the layer structure with the aidof an etching process, wherein a lateral widening of an etching openingof an etching mask is at least partly carried out during the etchingprocess, such that the recess comprises at least one side face arrangedin an inclined manner.

In a further embodiment, etching masks of different hardnesses are usedduring the etching process, in order to produce the recess with at leastone inclined side face. A soft etching mask may be formed, for example,from photoresist, or SiNx or a semiconductor material or a metal.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention is explained in greater detail below with reference to thefigures, in which:

FIG. 1 shows a schematic view of an end face of an optoelectroniccomponent,

FIG. 2 shows an enlarged illustration of an excerpt from FIG. 1,

FIG. 3 shows a schematic illustration of a further embodiment of arecess,

FIG. 4 shows a schematic illustration of a further embodiment of arecess, wherein upper side faces are formed perpendicularly and lowerside faces are formed in an inclined manner,

FIG. 5 shows a further embodiment of a recess, wherein upper side facesare formed in an inclined manner and lower side faces are formedperpendicularly,

FIG. 6 shows a further embodiment of a recess, wherein the two sidefaces adopt different angles with respect to the plane of the activezone,

FIG. 7 shows a further embodiment, where two recesses are arranged onopposite sides of a ridge of the laser diode,

FIG. 8 shows a plan view of an end face of a laser diode with a furtherembodiment of a recess and dislocations illustrated schematically,

FIG. 9 shows a plan view of an end face of an optoelectronic componentwith a recess and with a mesa trench,

FIG. 10 shows a further embodiment, wherein a mesa trench transitionsinto a recess,

FIG. 11 shows a view from above of a component,

FIGS. 12 to 14 show method steps of a first method for producing therecess,

FIGS. 15 to 18 show method steps of a second method for producing arecess, and

FIGS. 19 and 20 show method steps of a third method.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

One concept of the present exemplary embodiments consists in reducing oravoiding the formation of stepped imperfections at a cleavage edge, thatis to say an end face of the laser diode or the light emitting diode(LED) that is produced by cleavage, with the aid of at least one recesscomprising at least one side face which faces a mode space, i.e., anactive region of the active zone of the laser diode or the lightemitting diode (LED), and which is arranged at an angle of not equal to90° relative to the plane of the active zone of the laser diode/LED. Inaddition, the recesses are formed in such a way as to achieve anefficient shielding of the active zone against dislocations in the modespace. In addition, the geometry and the arrangement of the recess arechosen in such a way that the recess may be produced rapidly.

Experiments have shown that flanks of a recess that run out in a flatfashion and in particular are rounded have the effect that an etchingdepth is significantly less critical and even relatively deeply etchedrecesses comprising flanks that run out in a flat fashion and/or arerounded do not themselves act as defect centers for the formation ofstepped dislocations of the cleavage edge upon the cleavage of thecleavage edge, wherein the stepped dislocations may again extend intothe active region of the laser diode/LED. One reason for this is thatflanks that slope in a flat fashion or are rounded comprise asignificant reduction of stress fields in comparison with perpendicularflanks. Consequently, recesses formed in this way need not be controlledin their etching depth as accurately as recesses comprisingperpendicular flanks. A significant process simplification is achievedas a result.

Furthermore, recesses comprising flanks that run out in a flat fashionare overmolded better by a dielectric passivation, with the result thatan improvement in the quality and an increase in the yield of thecomponents are achieved. Moreover, experiments have shown that obliqueflanks of the recess in the region of a transverse facet cause thetransverse facet to turn away in the direction of the wafer surface,with the result that a more effective interception of a transverse facetis achieved. Consequently, it is possible to provide an optoelectroniccomponent comprising a good surface quality in the active region of thelaser facet. As a result, low threshold currents, hightransconductances, a high efficiency and also a high component stabilityand a good beam quality may be achieved.

The optoelectronic component is configured, for example, as an edgeemitting laser diode or a light emitting diode (LED). In particular, thelaser diode/LED may be produced from a III-V semiconductor material, inparticular from indium gallium nitride.

FIG. 1 shows, in a schematic illustration, a view of an end face 13 ofan optoelectronic component configured, e.g., as a light emitting diode(LED) or as a laser diode, in particular as a stripe laser diode. Alayer arrangement is provided, which in the upper end region comprises alayer structure 2 comprising an active zone 1. The active zone 1 maycomprise a plurality of layers arranged in a first plane. The firstplane is aligned perpendicularly to the image plane. The first plane isformed parallel to the y-axis and to the z-axis. The x-axis is alignedperpendicularly to the y-axis. The z-axis is perpendicular to the planey-x. A ridge 3 is arranged on the layer structure 2, said ridge beingaligned along the z-axis. The ridge 3 serves to concentrate the laserlight below the ridge 3 in a laser mode region 4. The laser mode region4 extends along the z-axis and occupies a region of the active zone 1and of adjoining layers below the ridge 3. A recess 6 is introduced intothe surface 5 of the layer structure 2 laterally alongside the ridge 3.The recess 6 comprises two side faces 7, 8 and a bottom face 9. The sidefaces 7, 8 are arranged in a manner inclined at an angle 28 with respectto the first plane of the active zone 1, which angle is not equal to90°. The first and second side faces 7, 8 comprise, for example, anangle 28 of between 95° and 160°, in particular between 98° and 130°.Depending on the embodiment chosen, the first and second side faces 7, 8may also comprise an angle of between 100° and 115° relative to thefirst plane. The first side face 7 faces the laser mode region 4. Thesecond side face 8 is arranged opposite with respect to the first sideface 7. Depending on the embodiment chosen, the second side face 8 maybe dispensed with and the recess 6 may extend as far as a lateral edgeregion to or a trench 11, which may constitute a mesa trench. In theexemplary embodiment illustrated, the trench 11 comprises perpendicularside faces and is formed with a greater depth than the recess 6.

If the layer structure 2 is then fractured along a fracture direction12, a dislocation 14 may form at the fractured end face 13, for example,proceeding from a side face of the trench 11. By virtue of the recess 6being provided, the dislocation 14 may not pass right into the region ofthe laser mode 4, but rather is intercepted by the recess 6. The endface 13 constitutes an emission face or a mirror face at which theelectromagnetic radiation, in particular, the laser mode, is specularlyreflected or output. Consequently, dislocations or defects of a planarfracture face 13 should be avoided in particular in the region of thelaser mode 4. For an optimum effect as a mirror face or emission face,the fracture face 13 should as far as possible be free of dislocationsin the region of the laser mode 4.

Depending on the embodiment chosen, the trench 11, which may constitutea mesa trench, may be dispensed with. The layer structure 2 may comprisea substrate 15 in the lower region, onto which substrate epitaxiallygrown layers 16 were deposited. The layers 16 also comprise the activezone 1. The substrate and/or the semiconductor layer may be based on aIII-V compound semiconductor or a II-VI compound semiconductor or zincoxide. The II-VI compound semiconductor may be a sulfide or a selenide.The III-V compound semiconductor may be based on a nitride compoundsemiconductor, a phosphide compound semiconductor, an antimonitecompound semiconductor or an arsenide compound semiconductor. The III-Vcompound semiconductor may be, for example, a nitride such as, forinstance, gallium nitride, indium nitride or aluminum nitride, aphosphide such as, for instance, gallium phosphide or indium phosphide afirst arsenide such as, for instance, gallium arsenide or indiumarsenide. In this case, the material system Al_(n)In_(1-n-m)Ga_(m)N maybe provided, for example, wherein 0≦n≦1, 0≦m≦1 and n+m≦1 may hold true.Moreover, the material system may comprise Al_(n)Ga_(m)In_(1-n-m)P,wherein 0≦n≦1, 0≦m≦1 and n+m≦1 hold true. Moreover, the material systemmay comprise Al_(n)Ga_(m)In_(1-n-m)Sb, wherein 0≦n≦1, 0≦m≦1 and n+m≦1hold true.

FIG. 2 shows the recess 6 from FIG. 1 in an enlarged illustration. Therecess 6 comprises, for example, a depth of between 100 nm and 800 nm,preferably between 200 nm and 500 nm, in particular between 300 nm and450 nm. The depth denotes the distance between the surface 5 and thebottom face 9 parallel to the x-axis. Moreover, the recess 6 maycomprise a length along the y-axis that is in the range of between 10 μmand 200 μm, in particular in the range of between 20 μm and 100 μm, inparticular between 30 μm and 50 μm. The length denotes the distancebetween the upper end regions of the side faces 7, 8, that is to say thelength in the plane of the surface 5. Moreover, the recess 6 comprises,as viewed along the y-axis, a distance with respect to the ridge 3 thatis in the range of between 10 μm and 150 μm, in particular between 20 μmand 100 μm, in particular between 30 μm and 50 μm. In this case, thedistance is measured at the surface 5 and extends from the upper edge ofthe first side face 7 as far as the side face of the ridge 3 that facesthe recess 6.

The arrangement also of the second side face 8 in the form of aninclined side face results in the dislocation 14 turning away upward inthe region of the second side face 8. Dislocations 14 are intercepted asa result. The epitaxially grown layers 16 in the region of the activezone constitute stressed epitaxial layers with high stress fields. Highstress fields arise in particular at the transition between a waveguidelayer and an active zone.

FIG. 3 shows, in a schematic illustration, an excerpt from a furtheroptoelectronic component comprising a recess 6, which is configuredsubstantially like the recess in FIG. 2, wherein, however, transitionregions 17, 18 between the first side face 7 and the second side face 8and the corresponding adjoining surface 5 are configured in arounded-off fashion. The configuration of the rounded-off transitionregions 17, 18 reduces stress fields in the transition between the firstand second side faces 7, 8 and the surface 5.

FIG. 4 shows a further embodiment of a recess 6 of an optoelectroniccomponent, wherein the recess 6 comprises side faces 7, 8 subdividedinto two side sections 19, 20, 21 and 22. The upper side sections 19, 21of the side faces 7, 8 are arranged substantially perpendicularly to thefirst plane, that is to say to the yz-plane. The second side sections20, 22 of the first and second side faces 7, 8 are configured asinclined faces. The inclination angle is configured in accordance withthe inclination angle range of the side faces from FIGS. 1 and 2. Thedistances and the depths and the lengths of the recess 6 in FIG. 4 arelikewise configured in accordance with the ranges of the embodiment fromFIG. 2.

FIG. 5 shows a further embodiment of a recess, wherein, in thisembodiment, the upper side sections 19, 21 are configured as inclinedside faces. The inclined side faces are arranged in the angle range ofthe first and second side faces 7, 8 of the embodiment from FIGS. 1 and2. The lower side sections 20, 22 of the first and second side faces 7,8 are arranged substantially perpendicularly to the first plane of theactive zone 1, i.e., the y-z plane. Furthermore, a further first bottomface 23 is arranged between the first side section 19 and the secondside section 20. Moreover, a further second bottom face 24 is arrangedbetween the further first side section 21 and the further second sidesection 22. The bottom faces 23 and 24 are arranged at the same heightand have an area of the same size.

FIG. 6 shows a further embodiment of a recess 6 of an optoelectroniccomponent in accordance with FIG. 1, wherein the two side faces 7, 8comprise different inclination angles 28 relative to the first plane ofthe active zone 1. In particular, the inclination angle of the firstside face 7, facing the ridge 3, is smaller than the inclination angleof the second side face 8. The second side face 8 faces the side fromwhich the end face 13 is fractured in the fracture direction 12. Theangles of the inclination of the side faces 7, 8 may be aligned inaccordance with the indicated angle ranges between 98° and 160°, inparticular between 98° and 130°, in particular between 100° and 115°,relative to the first plane of the active zone 1. Depending on theembodiment chosen, the inclination angle of the first side face 7,facing the ridge 3, may be greater than the inclination angle of thesecond side face 8. Moreover, the inclination angles of the two sidefaces 7, 8 may also be identical, that is to say that the two side faces7, 8 may be arranged mirror-symmetrically with respect to an imaginarycenter plane arranged between the two side faces.

FIG. 7 shows a further embodiment of an optoelectronic component that isconfigured substantially in accordance with FIG. 1, wherein, however, arecess 6, 25 is introduced into the surface 5 of the layer structure 2on both sides of the ridge 3. The second recess 25 may be configuredidentically to the recess 6. In particular, the second recess 25 may beconfigured mirror-symmetrically with respect to the recess 6 in relationto the ridge 3. Furthermore, the recesses 6, 25 may comprise differentshapes and depths.

FIG. 8 shows a further embodiment of an optoelectronic component,wherein the recess 6 is formed more deeply and the first and/or thesecond side face 7, 8 are/is arranged in a manner inclined at an angleof between 98° and 130°, in particular at an angle of between 100° and115°, with respect to the first plane of the active zone 1. In thisembodiment, the trench 11 may also be dispensed with. Particularly bymeans of an inclined side face which faces the active region of theactive zone, what is achieved is that dislocations 14 that formproceeding from the recess 6 in the direction of the active region ofthe active zone 1 are diverted downward and extend below the active zone1. This effect is brought about by virtue of the fact that dislocations14 always form perpendicularly to a side face 7.

FIG. 9 shows a further embodiment of an optoelectronic component,wherein the trench 11 likewise comprises inclined third and fourth sidefaces 27, 26. The side faces 27, 26 may comprise an inclination inaccordance with the side faces 7, 8. Particularly as a result of theconfiguration of the third side face 26 arranged in an inclined manner,dislocations 14 that form at the third side face 26 are led below theregion of the laser mode 4 on account of the inclined arrangement of thethird side face 26. Consequently, this type of dislocations may produceno or only a small impairment of the quality of the fractured end face13 in the region of the laser mode 4, i.e., in the active region of theactive zone 1.

FIG. 10 shows a further embodiment of an optoelectronic component,wherein the recess 6 comprises a stepped first side face 7 and aperpendicularly arranged second side face 8. The first side face 7comprises an upper first side section 19, a lower second side section 20and a further first bottom face 23. Both the upper and the lower sidesection 19, 20 are arranged in an inclined manner in an angle range withrespect to the first plane of the active zone 1. The angle may be in anangle range of between 95° and 160°, in particular between 98° and 130°,in particular between 100° and 115°. Depending on the embodiment chosen,the first and second side sections 19, 20 may comprise the same angle ordifferent angles. The further first bottom face 23 is arranged parallelto the first plane of the active zone 1. Moreover, depending on theembodiment chosen, a second recess 25 may also be provided. The secondrecess 25 may be configured in accordance with the recess 6 from FIG. 2.

The further first bottom face 23 is arranged at the depth at which thebottom face 9 and the recess 6 from FIG. 2 are arranged. The furtherfirst bottom face 23 is arranged in a range of between 100 nm and 800 nmbelow the surface 5. Moreover, the first bottom face 23 is arranged in arange of between 200 nm above and 200 nm below the plane of the activezone. In this embodiment, the bottom face 9 is arranged more deeply thanthe further first bottom face 23 of the active zone 1 and thus replacesthe function of a mesa trench, that is to say of the deeper trench 11from FIG. 1. The bottom face 9 is arranged, for example, more deeplythan 200 nm below the plane of the active zone 1.

FIG. 11 shows a laser diode comprising a ridge 3, a mesa trench 11 andtwo opposite end faces 13, 29. In addition, the illustration shows fourrecesses 6, 25 adjoining the end faces 13, 29. Depending on theembodiment chosen, the recesses 6, 25 may be configured in accordancewith the examples described above. In addition, the recesses 6, 25 mayrun parallel to the ridge, as is illustrated schematically by dashedlines.

For efficient current carrying and waveguiding, semiconductor diodesrequire a multiplicity of epitaxial individual layers comprising layerthicknesses in the range of from a few nanometers to hundreds of nm.Each of said layers comprises a specific material composition composedof gallium nitride, and/or aluminum gallium nitride, and/or indiumgallium nitride and/or aluminum indium gallium nitride. The layers aretypically deposited by means of MOCVD at temperatures of between 600 and1200° C. The layer structure 2 is stressed to a greater or lesserextent. During the cleavage of laser facets, that is to say of end faces13 for edge emitting laser diodes or LEDs, along specific layer planessteps thus occur at the cleaved end face 13. Disturbances in the facetquality may originate, for example, in substrates produced in anELOG-like manner with defect-rich zones or at skips.

In this case, the production of recesses 6 comprising inclined sidefaces 7, 8 and in particular comprising rounded transition regions 17,18 may be achieved by using resist masks instead of hard masks and witha plasma etching process optimized specifically for forming suchinclined side faces and comprising a high removal rate. The use of othermasks that are removed to a medium to high extent during the etchingprocess and thus lead to an inclined angle of the side faces 7, 8 alsoconstitute a technological possibility for producing the recesses 6, 25with inclined side faces. The recesses 6, 25 may be produced in variousways. By the use of two etching masks arranged one above the other. Inthis case, in the first etching step, a yielding mask with comparativelyhigh etching removal is used to produce the inclined side faces 7, 8. Ina second etching step, a hard mask is used here, which producesperpendicular side sections. In this step, the recess 6 is etched to thedesired depth, wherein the side faces 7, 8 arranged in an inclinedmanner are maintained in a critical lower region. By way of example, thetransition from the first to the second step may also take place whenthe first mask with a high etching removal is used up, that is to saycompletely removed. In addition, etching masks comprising differenthardnesses and thus different removal rates may be arranged on oppositesides of the recess. As a result, on the different sides, differentinclination angles of the side faces may be achieved in a simple mannerby means of etching masks that are to be removed laterally to differentextents. A soft etching mask may consist, e.g., of photoresist that isused for photolithographic methods. Moreover, the soft mask may alsoconsist of SiNx or a semiconductor material or a metal.

Moreover, the recesses 6, 25 may also be produced by the use of twoetching process steps, wherein the first etching process step comprisesa high removal rate and thus produces side faces 7, 8 arranged in aninclined manner. In the second process step, in order to etch therecesses 6, 25 to the desired depth, use is made of an etching plasmaand corresponding plasma parameters which comprise a lower removal rateand produce perpendicular flanks. In this case, less damage to theadjoining layer structure 2 is brought about in critical depth ranges ofthe recesses 6, 25 on account of the lower removal rate. Nevertheless,the side faces 7, 8 arranged in an inclined manner may be maintained.Moreover, the opposite case is also possible, wherein the side faces 7,8 arranged in an inclined manner are situated in the upper part of therecesses 6, 25. This may be achieved, for example, in a process-dictatedmanner by means of the different etching rates and different epitaxiallayers.

FIGS. 12 to 14 show steps of a first method for introducing the recess 6into a layer structure 2. FIG. 12 shows, in a schematic illustration, alayer structure 2 comprising epitaxial layers, which comprises an activezone 1 for generating an electromagnetic radiation. The layer structure2 may be applied on a carrier, which is not illustrated. A first etchingmask 31 is applied on the layer structure 2. A second etching mask 32 isapplied on the first etching mask. The second etching mask 32 covers anedge region 33 of the first etching mask and thereby defines an etchingopening 34. In the example illustrated, the second etching mask 32comprises a lower hardness than the first etching mask 31 and/or anetching method that brings about a lateral removal of the second etchingmask 32 is used in a first etching step. The lower hardness of thesecond etching mask brings about a lateral removal of the second etchingmask during the etching process.

As a result, as illustrated in FIG. 13, a recess 6 is obtained whichcomprises inclined side faces 7, 8. In a second etching step, the depthof the recess 6 is then increased, wherein the structure of the bottomface with the inclined side faces 7, 8 is preserved. For this purpose,the first etching mask 31 is formed from a harder material, such thatsubstantially no lateral removal of the first etching mask 31 takesplace during the second etching step. Moreover, an etching method thatbrings about a small or no lateral removal of the first etching mask 31may be used during the second etching step. With the aid of the secondetching step, the bottom face 9 of the recess 6 is brought down to thedesired depth in the region of the plane of the active zone 1, as isillustrated in FIG. 14. In this case, on account of the stability of thefirst etching mask 31 in the upper region of the recess 6 side faces areformed which are arranged substantially perpendicularly to the plane ofthe active zone 1.

FIGS. 15 to 18 show method steps of a second method for introducing arecess 6 into a layer structure 2. FIG. 15 shows, in a schematicillustration, a layer structure 2 comprising epitaxial layers andcomprising an active zone 1 for generating an electromagnetic radiation.The layer structure 2 may be applied on a carrier, which is notillustrated. A first etching mask 31 is applied on the layer structure2. A second etching mask 32 is applied on the first etching mask 31. Thesecond etching mask 32 covers an edge region 33 of the first etchingmask only slightly or not at all. Consequently, the etching opening 34is defined by the second etching mask 32, as illustrated, or by thefirst etching mask 31. In the example illustrated, the second etchingmask 32 has a greater hardness than the first etching mask 31 and/or anetching method that brings about substantially no lateral removal of thesecond etching mask 32 is used in a first etching step.

As a result, as illustrated in FIG. 16, a recess 6 is obtained whichcomprises side faces which are arranged substantially perpendicularly tothe plane of the active zone 1. Afterward, the second etching mask 32 isremoved, as is illustrated in FIG. 17. In a subsequent second etchingstep, the depth of the recess 6 is then increased, wherein the lowerstructure of the recess 6 with the bottom face and with theperpendicular side faces in the lower region of the recess ismaintained. However, side faces 7, 8 arranged in an inclined manner areformed in the upper region of the recess 6. For this purpose, the firstetching mask 31 may be formed from a softer material, such that alateral removal of the first etching mask 31 takes place during thesecond etching step. Moreover, an etching method that brings about alateral removal even of a harder first etching mask 31 may be usedduring the second etching step. With the aid of the second etching step,the depth of the bottom face 9 of the recess 6 is brought down to thedesired depth in the region of the plane of the active zone 1, asillustrated in FIG. 18.

FIGS. 19 and 20 show method steps of a third method, by which a recess 6comprising differently inclined side faces 7, 8 may be introduced into alayer structure 2 comprising epitaxial layers and an active zone 1 forgenerating electromagnetic radiation. For this purpose, a first and asecond etching mask 31, 32 are arranged on the layer structure 2, saidetching masks delimiting an etching opening 34 from two sides. In theexample illustrated, the second etching mask 32 comprises a lowerhardness than the first etching mask 31, such that at the second etchingmask 32 during an etching process a lateral removal takes place which isgreater than the lateral removal of the first etching mask 31. A recess6 comprising a bottom face 9 and two differently inclined side faces 7,8 is obtained in this way. The bottom face 9 is arranged in the desiredregion in proximity to the plane of the active zone 1. The inclinationsof the side faces 7, 8 may be set by means of different hardnesses orlateral durability of the etching masks vis-à-vis the etching method. Inthe example illustrated, the first side face 7 comprises an angle of 95°to 160° relative to the plane of the active zone 1. The second side face8 is arranged perpendicularly to the plane of the active zone 1.Accordingly, the second etching mask 32 was not removed or was scarcelyremoved laterally. Depending on the embodiment chosen, the first and/orthe second side face 7, 8 may also comprise other inclination angles; inparticular, the inclination angle of the second side face 8 may also bein the range of between 95° and 160° relative to the plane of the activezone 1.

1-15. (canceled)
 16. An optoelectronic component comprising: a layerstructure comprising an active zone for generating an electromagneticradiation, wherein the active zone is arranged in a first plane, whereina recess is introduced into a surface of the layer structure, whereinthe recess adjoins an end face of the component, wherein the end face isarranged in a second plane, wherein the second plane is arrangedsubstantially perpendicularly to the first plane, wherein the recesscomprises a bottom face and a side face, wherein the side face isarranged substantially perpendicularly to the end face, wherein the sideface is arranged in a manner inclined at an angle not equal to 90° withrespect to the plane of the active zone, wherein the bottom face isarranged in a region of the first plane of the active zone, wherein theat least one side face of the recess comprises a stepped shapecomprising at least two side sections, wherein the side sections arearranged in a laterally offset fashion, wherein the side sections areconnected to one another via a second bottom face, and wherein at leastone side section is formed as an inclined side face.
 17. The componentaccording to claim 16, wherein an upper side section is formed as aninclined side face.
 18. The component according to claim 16, wherein alower side section is formed as an inclined side face.
 19. The componentaccording to claim 17, wherein the lower side section is substantiallyperpendicularly arranged compared to a plane of the active zone.
 20. Thecomponent according to claim 16, wherein the bottom face is arranged ata depth of between 100 nm and 800 nm below a surface of the layerstructure.
 21. The component according to claim 16, wherein the sideface is arranged in a manner inclined at an angle of 95°-160°, inparticular between 98° and 130°.
 22. The component according to claim16, wherein the recess comprises a second side face, and wherein thesecond side face is arranged opposite with respect to the first sideface.
 23. The component according to claim 22, wherein the first andsecond side faces are arranged at different angles.
 24. The componentaccording to claim 16, wherein the side face comprises a face sectionarranged substantially perpendicularly relative to the first plane, andan inclined face section, wherein the inclined face section of the sideface is arranged in an upper face section of the side face in relationto a depth of the side face, and wherein the face section arrangedsubstantially perpendicularly is arranged in a lower region of the sideface.
 25. The component according to claim 16, wherein the side facecomprises a face section arranged substantially perpendicularly relativeto the first plane, and an inclined face section, wherein the inclinedface section of the side face is arranged in a lower face section of theside face in relation to a depth of the side face, and wherein the facesection arranged substantially perpendicularly is arranged in an upperregion of the side face.
 26. The component according to claim 16,wherein the recess comprises in a plane parallel to the second plane atleast one rounded transition between the side face of the recess and atop side of the layer structure and/or a bottom face of the recess. 27.The component according to claim 16, wherein the recess comprises awidth in the second plane that is in a range of 10 μm to 200 μm.
 28. Thecomponent according to claim 16, wherein the recess comprises a distancefrom a ridge that is in a range of 10 μm to 150 μm.
 29. The componentaccording to claim 16, wherein a mesa trench is provided, wherein themesa trench is arranged in the second plane in a laterally offsetfashion with respect to the recess between a side of the component andthe recess.
 30. A method for producing the component according to claim16, the method comprising: introducing the recess into the layerstructure applying an etching process; laterally widening an etchingopening of an etching mask while applying the etching process, such thatthe recess is introduced into the layer structure, wherein the etchingprocess forms the recess comprising at least one inclined side face. 31.The method according to claim 30, further comprising using etching maskswith different hardnesses thereby producing the recess comprising the atleast one inclined side face.
 32. The method according to claim 30,wherein a softer etching mask is a mask composed of photoresist, SiNx, asemiconductor material or a metal.
 33. The method according to claim 32,further comprising partially laterally removing the softer etching mask.